IRFP360LC MOSFET

Type Designator: IRFP360LC

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110 nC

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm